SP8009 - N-Channel Enhancement Mode Field Effect Transistor
SP8009 Features
* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. P in 1 TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Li
