* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C IDM -
SP823C
SamHop Microelectronics
94.03 KB
N-channel logic level enhancement mode field effect transistor.
SP823CGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
I.
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