* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS
STF8209A
SamHop Microelectronics
82.62 KB
Dual n-channel enhancement mode field effect transistor.
Gre r e Pro
STF8209A
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS.
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