* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) G1 3 S1 2 T DF N 2X3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VD
STF8233
SamHop Microelectronics
96.28 KB
Dual n-channel enhancement mode field effect transistor.
Green Product
STF8233
Ver 2.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R D.
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