* Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. TOP VIEW 1.85 0.03 BOTTOM VIEW 0.65 2.75 0.03 8276 Date Code Mark area 1-pin index mark S1 0.210 0.010 0.107 0.007 S1 S2 G1 G2 S1 S2 0.65 0.65 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2
SC8276
SamHop
126.89 KB
Dual n-channel enhancement mode field effect transistor.
SC8276Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 4.1
PRODUCT SUMMARY
VSSS
IS RSS(O.
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