* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 36A R DS(ON) (m Ω) Max 27 @ VGS=10V 42 @ VGS=4.5V D D G S G D S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C un
STB60L60 Datasheet (255.75 KB)
STB60L60
SamHop
255.75 KB
N-channel logic level enhancement mode field effect transistor.
STB/P60L60
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
FEATUR.
📁 Related Datasheet
STB60L60A N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop)
STB6000 N-CHANNEL Power MOSFET (ST Microelectronics)
STB6010 SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
STB60100C SCHOTTKY RECTIFIER (SMC Diode)
STB6011 SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
STB6012 SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
STB6013 SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
STB6015 SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
STB6016 SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
STB6018 SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
