SSF5N80A
Samsung Electronics
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Advanced power mosfet.
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SSF5N50D - 500V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS RDS(on)
ID
500V 1.5Ω (typ.)
5A
TO-252
Features and Benefits
Advanced MOSFET process technology Special desig.
SSF5N60D - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
600V 1.88Ω (typ.)
ID 5A
Features and Benefits:
TO-252
Advanced MOSFET process technology Special .
SSF5N60F - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
600V
RDS(on) 2ohm(typ.)
ID 4A
Features and Benefits:
TO220F
Advanced tre.
SSF5N60G - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
600V 1.88Ω (typ.)
ID 5A
Features and Benefits:
TO-251
Advanced MOSFET process technology Special .
SSF5N90A - Advanced Power MOSFET
(Samsung Electronics)
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SSF5NS50U - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
ID
500V 0.55Ω (typ.)
5A ①
Features and Benefits:
High dv/dt and avalanche capabilities 100% avalanch.
SSF5NS60UD - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
600V 0.73Ω (typ.)
ID 5A ①
Features and Benefits:
TO-252 (D-PAK)
High dv/dt and avalanche capabiliti.
SSF5NS65G - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
650V 1.0Ω (typ.)
ID 5A ①
Features and Benefits:
Feathers: High dv/dt and avalanche capabilities 100.
SSF5NS65G - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS RDS(on)
ID
650V 1.0Ω (typ.)
5A ①
Features and Benefits
High dv/dt and avalanche capabilities 100% avalanche t.
SSF5NS65UD - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
650V 0.74Ω (typ.)
ID 5A ①
Features and Benefits:
TO-252 (DPAK)
High dv/dt and avalanche capabilitie.
