KMM5361203C2W Datasheet - Samsung Semiconductor

KMM5361203C2W 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas

The Samsung KMM5361203C2W is a 1Mx36bits Dynamic RAM high density memory module. The Samsung KMM5361203C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted and one CMOS 1Mx4bit Quad CAS DRAM in 24-pin SOJ package on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacito.

DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) Changed module PCB from 6-Layer to 4-Layer. KMM5361203C2W/C2WG Changed Module Part No. from KMM5361203CW/CWG to KMM5361203C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361203C2W/C2WG KMM5361203C2W/C2WG with Fast Page Mode 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS.

KMM5361203C2W Features

* Part Identification - KMM5361203C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361203C2WG(1024 cycles/16ms Ref, SOJ, Gold)

* Fast Page Mode Operation

* CAS-before-RAS refresh capability

* RAS-only refresh capability

* TTL compatible inputs and outputs

KMM5361203C2W_SamsungSemiconductor.pdf