KMM5361205C2W Datasheet (Samsung Semiconductor) - 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

KMM5361205C2W, 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5361205C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate.

A 0.1 or 0.22uF decouplin

DRAM MODULE KMM5361205C2W/C2WG 1Mx36 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev.

0.0 (Nov.

1997) DRAM MODULE Revision History Version 0.0 (November 1997) Changed module PCB from 6-Layer to 4-Layer.

KMM5361205C2W/C2WG Changed Module Part No.

from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision .

-2- Rev.

0.0 (Nov.

1997) DRAM MODULE KMM5361205C2W/C2WG KMM5361205C2W/C2WG Fast Page Mode with Extended Data Out 1M x 36 DRAM SIMM using 1Mx16

KMM5361205C2W Features

* Part Identification - KMM5361205C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361205C2WG(1024 cycles/16ms Ref, SOJ, Gold)

* Fast Page Mode with Extended Data Out

* CAS-before-RAS refresh capability

* RAS-only and hidden refresh capability

* TTL compatible inp