M53231600BE0 Datasheet (Samsung Semiconductor) - (M53231600BE0/BJ0-C) DRAM Module

M53231600BE0, (M53231600BE0/BJ0-C) DRAM Module

The Samsung M53231600BE0/BJ0-C is a 16Mx32bits Dynamic RAM high density memory module.

The Samsung M53231600BE0/BJ0-C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for eac

www.DataSheet4U.com DRAM MODULE M53231600BE0/BJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept.

1997) M53231600BE0/BJ0-C Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col.

addr.) in AC CHARACTERISTICS.

Version 0.1 (June 1998) The 3rd.

generation of 64M DRAM components are applied for this module

M53231600BE0 Features

* Part Identification - M53231600BE0-C(4K cycles/64ms Ref, SOJ, Solder) - M53231600BJ0-C(4K cycles/64ms Ref, SOJ, Gold)

* Extended Data Out Mode Operation

* CAS-before-RAS & Hidden Refresh capability

* RAS-only refresh capability

* TTL compatible inputs and ou