IRF451
Samsung semiconductor
214.37kb
N-channel power mosfet.
TAGS
📁 Related Datasheet
IRF450 - N-Channel MOSFET
(STMicroelectronics)
ru~1m S[IG0iJSD©-OTO@H~[OL~M©uOSO@O~DN©~
IRF 450 - 451 IRF 452 - 453
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF450 IRF451 IRF452 I.
IRF450 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF450
DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipatio.
IRF450 - N-Channel Power MOSFET
(Samsung semiconductor)
.
IRF450 - N-Channel Power MOSFET
(Seme LAB)
IRF450
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
.
IRF450 - N-Channel Power MOSFET
(Intersil Corporation)
IRF450
Data Sheet March 1999 File Number
1827.3
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field .
IRF450 - N-Channel Power MOSFET
(International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRF450
500V
RDS(on)
ID
0.400
.
IRF451 - N-Channel MOSFET
(STMicroelectronics)
ru~1m S[IG0iJSD©-OTO@H~[OL~M©uOSO@O~DN©~
IRF 450 - 451 IRF 452 - 453
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF450 IRF451 IRF452 I.
IRF451 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF451
DESCRIPTION ·13A,450V ·Low RDS(on) at high voltage ·Improved.
IRF452 - N-Channel MOSFET
(STMicroelectronics)
ru~1m S[IG0iJSD©-OTO@H~[OL~M©uOSO@O~DN©~
IRF 450 - 451 IRF 452 - 453
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF450 IRF451 IRF452 I.
IRF452 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF452
DESCRIPTION ·11A,500V ·Low RDS(on) at high voltage ·Improved.
Stock and price
