K4H561638F - 256Mb F-die DDR SDRAM Specification

Samsung semiconductor

K4H561638F Description

DDR SDRAM 256Mb F-die (x8, x16) DDR SDRAM 256Mb F-die DDR SDRAM Specification Revision 1.3 October, 2004 Rev.1.3 October, 2004 DDR SDRAM 256Mb F-.
DDR SDRAM 16Mb x 16 32Mb x 8 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A.

K4H561638F Features

* Double-data-rate architecture; two data transfers per clock cycle
* Bidirectional data strobe L(U)DQS
* Four banks operation
* Differential clock inputs(CK and CK)
* DLL aligns DQ and DQS transition with CK transition
* MRS cycle with address key pro

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Datasheet Details

Part number: K4H561638F
Manufacturer: Samsung semiconductor
File Size: 329.94 KB
Datasheet: K4H561638F_Samsungsemiconductor.pdf
Description: 256Mb F-die DDR SDRAM Specification

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256Mb F-die DDR SDRAM Specification Samsung semiconductor

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