K4S281632C-TC1H Datasheet - Samsung semiconductor

K4S281632C-TC1H, 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar.2000 * Samsung Electronics reserves the righ.
The K4S281632C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high.

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Datasheet Details

Part number:

K4S281632C-TC1H

Manufacturer:

Samsung semiconductor

File Size:

112.61 KB

Description:

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54 TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 2M x 16 Sense AMP 2M x 16 2M x 16 2M x 16 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Addr

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K4S281632C-TC1H 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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