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K4S56323LF-FHL - 2M x 32Bit x 4 Banks Mobile SDRAM

Download the K4S56323LF-FHL datasheet PDF. This datasheet also covers the K4S56323LF-FE variant, as both devices belong to the same 2m x 32bit x 4 banks mobile sdram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K4S56323LF-FE_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Overview

K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in.

Key Features

  • VDD/VDDQ = 2.5V/2.5V.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR (Par.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S56323LF-FHC 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHE 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHN 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHR 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHS 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FC 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FE 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FL 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FN 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FR 2M x 32Bit x 4 Banks Mobile SDRAM