K4S56323LF-FHL, K4S56323LF-FE - 2M x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

The K4S56323LF-FHL by Samsung semiconductor is a 2M x 32Bit x 4 Banks Mobile SDRAM. Below is the official datasheet preview.

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K4S56323LF-FHL 2M x 32Bit x 4 Banks Mobile SDRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4S56323LF-FHL** 2M x 32Bit x 4 Banks Mobile SDRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4S56323LF-FHL, K4S56323LF-FE
Manufacturer	Samsung semiconductor
File Size	170.16 KB
Description	2M x 32Bit x 4 Banks Mobile SDRAM
Datasheet	K4S56323LF-FE_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4S56323LF-FHL, K4S56323LF-FE. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S56323LF-FHL datasheet.

K4S56323LF-FHL Product details

Description

The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

VDD/VDDQ = 2.5V/2.5V.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Par.

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Other Datasheets by Samsung semiconductor

K4S56323LF-FHC - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHE - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHN - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHR - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FHS - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FC - 2M x 32Bit x 4 Banks Mobile SDRAM

Published: Apr 4, 2010 |