K4T51043QB-ZCD5, K4T51083QB - 512Mb B-die DDR2 SDRAM

Samsung semiconductor

K4T51043QB-ZCD5 Datasheet Preview — This datasheet PDF includes multiple part numbers: K4T51043QB-ZCD5, K4T51083QB. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	K4T51043QB-ZCD5, K4T51083QB
Manufacturer	Samsung semiconductor
File Size	633.79 KB
Description	512Mb B-die DDR2 SDRAM
Datasheet	K4T51083QB_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4T51043QB-ZCD5, K4T51083QB. Please refer to the document for exact specifications by model.

K4T51043QB-ZCD5 Product details

Description

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 28 Rev.1.5 July 2005 512Mb B-die DDR2 SDRAM 0. Ordering Information Organization 128Mx4 64Mx8 32Mx16 DDR2-533 4-4-4 K4T51043QB-GCD5 K4T51043QB-ZCD5 K4T51083QB-GCD5 K4T51083QB-ZCD5 K4T51163QB-GCD5 K4T51163QB-ZCD5 DDR2-400 3-3-3 K4T51043QB-GCCC K4T51043QB-ZCCC K4T51083QB-GCCC K4T51083QB-ZCCC K4T51163QB-GCCC K4T51163QB-ZCCC www.DataSheet4U.com DDR2 SDRAM Package 60 FBGA 60 FBGA 60 FBGA 60 FB

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin.
4 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Read Latency(RL) -1.
Burst Length: 4 , 8(Interleav.

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Published: Apr 22, 2010 |