K6E0808C1E-P - 32K x 8 Bit High-Speed CMOS Static RAM

Samsung semiconductor

Datasheet Details

The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits.

Fast Access Time 10, 12, 15ns(Max. ).
Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 2mA(Max. ) 0.6mA(Max. ) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max. ) K6E0808C1E-12 : 80mA(Max. ) K6E0808C1E-15 : 80mA(Max. ).
Single 5.0V±10% Power Supply.
TTL Compatible Inputs and Outputs.
I/O Compatible with 3.3V Device.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
2V Minimum Data Retention : L-Ve.

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