K6T4016V3C Datasheet (Samsung semiconductor)

K6T4016V3C, CMOS SRAM

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 Initial draft 0.1 0.11 Revised - Speed bin change Commercial : 70/85ns → 70/85/100ns Industrial : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 5mA → 6mA ICC2 : 50mA → 45mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts Errata correction 1.0 Finalize Draft Date January 13, 1998 J