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K6T2008S2M Datasheet - Samsung Semiconductor

256K X 8 Bit Low Power And Low Voltage CMOS Static RAM

K6T2008S2M Features

* Process Technology: TFT

* Organization: 256Kx8

* Power Supply Voltage K6T2008S2M Family: 2.3~2.7V

* Low Data Retention Voltage: 2V(Min)

* Three state output and TTL Compatible

* Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F CMOS SRAM GENERAL DESCRI

K6T2008S2M General Description

The K6T2008S2M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low .

K6T2008S2M Datasheet (166.68 KB)

Preview of K6T2008S2M PDF

Datasheet Details

Part number:

K6T2008S2M

Manufacturer:

Samsung Semiconductor

File Size:

166.68 KB

Description:

256k x 8 bit low power and low voltage cmos static ram.
www.DataSheet4U.com K6T2008S2M Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.

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K6T2008S2M 256K Bit Low Power And Low Voltage CMOS Static RAM Samsung Semiconductor

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