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K6T2008S2M Datasheet - Samsung Semiconductor

K6T2008S2M 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM

The K6T2008S2M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low .
www.DataSheet4U.com K6T2008S2M Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize Draft Date Remark September 30, 1997 Preliminary August 27, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any ques.

K6T2008S2M Features

* Process Technology: TFT

* Organization: 256Kx8

* Power Supply Voltage K6T2008S2M Family: 2.3~2.7V

* Low Data Retention Voltage: 2V(Min)

* Three state output and TTL Compatible

* Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F CMOS SRAM GENERAL DESCRI

K6T2008S2M_SamsungSemiconductor.pdf

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Datasheet Details

Part number:

K6T2008S2M

Manufacturer:

Samsung Semiconductor

File Size:

166.68 KB

Description:

256k x 8 bit low power and low voltage cmos static ram.

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