K6T0808U1D, K6T0808V1D Datasheet - Samsung semiconductor

K6T0808U1D CMOS SRAM

K6T0808V1D, K6T0808U1D Family Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 History Initial draft 1.0 Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA - Improved VIL(Min.) : 0.4V→0.6V - Imp.

K6T0808V1D-Samsungsemiconductor.pdf

K6T0808U1D Datasheet Preview — This datasheet PDF includes multiple part numbers: K6T0808U1D, K6T0808V1D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K6T0808U1D, K6T0808V1D

Manufacturer:

Samsung semiconductor

File Size:

149.68 KB

Description:

Cmos sram.

Note:

This datasheet PDF includes multiple part numbers: K6T0808U1D, K6T0808V1D.
Please refer to the document for exact specifications by model.

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K6T0808U1D K6T0808V1D CMOS SRAM Samsung semiconductor

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