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K6T0808U1D, K6T0808V1D Datasheet - Samsung semiconductor

K6T0808U1D - CMOS SRAM

K6T0808V1D, K6T0808U1D Family Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No.

0.0 History Initial draft 1.0 Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA - Improved VIL(Min.) : 0.4V→0.6V - Imp

K6T0808V1D-Samsungsemiconductor.pdf

This datasheet PDF includes multiple part numbers: K6T0808U1D, K6T0808V1D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

K6T0808U1D, K6T0808V1D

Manufacturer:

Samsung semiconductor

File Size:

149.68 KB

Description:

Cmos sram.

Note:

This datasheet PDF includes multiple part numbers: K6T0808U1D, K6T0808V1D.
Please refer to the document for exact specifications by model.

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