K6T0808C1D Datasheet - Samsung semiconductor

K6T0808C1D CMOS SRAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History 0.0 Initial draft 0.1 First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM62256D-4/5/7 Family tOH = 5 → 10ns - KM62256DL/DLI IDR = 50→30µA KM62256DL-L/DLI-L IDR = 30 → 15µA 1.0 Finalize - Remove ICC write value - Improved operating current ICC2 = 70 → 60mA - Improved standby current KM62256DL/DLI ISB1.

K6T0808C1D-Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6T0808C1D

Manufacturer:

Samsung semiconductor

File Size:

168.67 KB

Description:

Cmos sram.

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