K6T1008C2C Datasheet - Samsung semiconductor

K6T1008C2C CMOS SRAM

K6T1008C2C Family Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Initial draft 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA 1.0 Finalized - Add 70ns speed bin for commercial product and 85ns speed bin for industrial. 2.0 Revised - Improved operating current Add typical value. ICC Read : 15mA → 10mA(Remove write current) ICC2 : 90mA → 60mA - Speed bin change Remove 45ns from commercial part .

K6T1008C2C-Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6T1008C2C

Manufacturer:

Samsung semiconductor

File Size:

185.75 KB

Description:

Cmos sram.

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