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K6T1008V2C Datasheet - Samsung semiconductor

K6T1008V2C 128K x8 bit Low Power and Low Voltage CMOS Static RAM

The K6T1008V2C and K6T1008U2C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-.
K6T1008V2C, K6T1008U2C Family Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM www.DataSheet4U.com Revision History Revision No. History 0.0 1.0 Initial draft Finalize - Increased ISB, IDR Commercial part = 10µA Industrial part = 20 µA Revise - Change speed bin KM68V1000C Family: 70/85ns → 70/100ns KM68U1000C Family: 70/100ns → 85/100ns - Improved operating current: 40mA → 35mA - Improved power dissipation PD: 0.7W → 1.0W - Improved standby current Extended/Indust.

K6T1008V2C Features

* Process Technology: 0.4 µm CMOS

* Organization: 128K x8

* Power Supply Voltage: K6T1008V2C family: 3.0~3.6V K6T1008U2C family: 2.7~3.3V

* Low Data Retention Voltage: 2V(Min)

* Three state output and TTL Compatible

* Package Type: 32-SOP-525, 32-TSOP1

K6T1008V2C_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6T1008V2C

Manufacturer:

Samsung semiconductor

File Size:

172.38 KB

Description:

128k x8 bit low power and low voltage cmos static ram.

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K6T1008V2C K6T1008V2C 128K bit Low Power and Low Voltage CMOS Static RAM Samsung semiconductor

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