K6T4008C1B Datasheet (Samsung semiconductor)

K6T4008C1B, CMOS SRAM

K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No.

History 0.0 Initial Draft 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA 1.0 Finalize - Changed Operating current ICC1 at write : 45mA → 40mA ICC2; 90mA → 80mA - Change test load at 55ns : 100pF → 50pF 2.0 Revise - Change datasheet format 3.0 Revise - Industrial product speed bin change:70/100ns → 55/70ns CMOS SRAM Dra