Datasheet4U Logo Datasheet4U.com

K6T4008C1B Datasheet - Samsung semiconductor

K6T4008C1B CMOS SRAM

K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA 1.0 Finalize - Changed Operating current ICC1 at write : 45mA → 40mA ICC2; 90mA → 80mA - Change test load at 55ns : 100pF → 50pF 2.0 Revise - Change datasheet format 3.0 Revise - Industrial product speed bin change:70/100ns → 55/70ns CMOS SRAM Dra.

K6T4008C1B Datasheet (167.82 KB)

Preview of K6T4008C1B PDF
K6T4008C1B Datasheet Preview Page 2 K6T4008C1B Datasheet Preview Page 3

Datasheet Details

Part number:

K6T4008C1B

Manufacturer:

Samsung semiconductor

File Size:

167.82 KB

Description:

Cmos sram.

📁 Related Datasheet

K6T4008C1C CMOS SRAM (Samsung semiconductor)

K6T4008U1C CMOS SRAM (Samsung semiconductor)

K6T4008V1C CMOS SRAM (Samsung semiconductor)

K6T4016U3C CMOS SRAM (Samsung semiconductor)

K6T4016U4C CMOS SRAM (Samsung semiconductor)

K6T4016V3C CMOS SRAM (Samsung semiconductor)

K6T4016V4C CMOS SRAM (Samsung semiconductor)

K6T0808C1D CMOS SRAM (Samsung semiconductor)

TAGS

K6T4008C1B CMOS SRAM Samsung semiconductor

K6T4008C1B Distributor