K6T4008V1C Datasheet (Samsung semiconductor)

K6T4008V1C, CMOS SRAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No.

History 0.0 Initial Draft 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts - Add 32-TSOP1-0820 0.11 Errata correct - 32-TSOP1-0813 products: T → TG 1.0 Finalize Draft Data Januar