K7N401801A Datasheet (Samsung semiconductor) - (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM

K7N401801A, (K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM

The K7N403601A and K7N401801A are 4,718,592 bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.

Address, data inputs, and all control signals except output enable and linear burst order are synchronized

K7N403601A K7N401801A www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev.

No.

0.0 0.1 History 1.

Initial document.

Changed DC condition at Icc and ISB.

Icc ; from 350mA to 400mA at -16, from 340mA to 390mA at -15, from 310mA to 360mA at -13, ISB ; from 130mA to 140mA at -16, from 120mA to 130mA at -15, from 120mA to 130mA at -13, 1.0 1.

Final spec release 2.

Changed input & output capacitance.

CIN ; from 6pF

K7N401801A Features

* VDD=3.3V+0.165V/-0.165V Power Supply.

* VDDQ Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.