K7N401801M Datasheet - Samsung semiconductor

(K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM

K7N401801M Features

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.

K7N401801M General Description

The K7N403601M and K7N401801M are 4,718,592 bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized .

K7N401801M Datasheet (311.55 KB)

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K7N401801M

Manufacturer:

Samsung semiconductor

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311.55 KB

Description:

(k7n401801m / k7n403601m) 128kx36 & 256kx18 pipelined ntram-tm.
K7N403601M K7N401801M www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision Hist.

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K7N401801M K7N401801M K7N403601M 128Kx36 256Kx18 Pipelined NtRAM-TM Samsung semiconductor

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K7N401801M Features

K7N401801M General Description

Datasheet Details

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