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K9F5608U0M-YCB0

32M x 8 Bit NAND Flash Memory

K9F5608U0M-YCB0 Features

* Voltage Supply : 2.7V~3.6V

* Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte

* 528-Byte Page Read Operation - Random Access

K9F5608U0M-YCB0 General Description

- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. Draft Date April. 10th 1999 July. 23th 1999 Sep. 15th 1999 Remark Advanced Information Advanced Information Preliminary 0.3 Mar. 21th 2000 Preliminary 0.4 0.5 Apr. 7th 2000 Apr. 29th 2000 Pr.

K9F5608U0M-YCB0 Datasheet (353.05 KB)

Preview of K9F5608U0M-YCB0 PDF

Datasheet Details

Part number:

K9F5608U0M-YCB0

Manufacturer:

Samsung semiconductor

File Size:

353.05 KB

Description:

32m x 8 bit nand flash memory.
K9F5608U0M-YCB0,K9F5608U0M-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial .

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K9F5608U0M-YCB0 32M Bit NAND Flash Memory Samsung semiconductor

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