Datasheet Details
- Part number
- K9F5608U0M-YCB0
- Manufacturer
- Samsung semiconductor
- File Size
- 353.05 KB
- Datasheet
- K9F5608U0M-YCB0_Samsungsemiconductor.pdf
- Description
- 32M x 8 Bit NAND Flash Memory
K9F5608U0M-YCB0 Description
K9F5608U0M-YCB0,K9F5608U0M-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No.History 0.0 0.1 0.2 Initial .
- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming.
K9F5608U0M-YCB0 Features
* Voltage Supply : 2.7V~3.6V
* Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit
* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
* 528-Byte Page Read Operation - Random Access
K9F5608U0M-YCB0 Applications
* such as solid state file storage and other portable applications requiring non-volatility. PIN CONFIGURATION
K9F5608U0M-YCB0/YIB0
N. C N. C N. C N. C N. C GND R/B RE CE N. C N. C Vcc Vss N. C N. C CLE ALE WE WP N. C N. C N. C N. C N. C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44
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