K9F5608U0M-YCB0 Datasheet (Samsung semiconductor)

K9F5608U0M-YCB0, 32M x 8 Bit NAND Flash Memory

- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming.

Draft Date April.

10th 1999 July.

23th 1999 Sep.

15th 1999 Remark Advanced Information Advanced Information Preliminary 0.3 Mar.

21th 2000 Preliminary 0.4 0.5 Apr.

7th 2000 Apr.

29th 2000 Pr

K9F5608U0M-YCB0,K9F5608U0M-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No.

History 0.0 0.1 0.2 Initial issue.

Revised real-time map-out algorithm(refer to technical notes) 1.

Changed device name i.

KM29U256T -> K9F5608U0M-YCB0 ii.

KM29U256IT -> K9F5608U0M-YIB0 1.

Changed tWP AC Timing - If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise tWP may be minimum 25ns.

Changed Sequential Row Read operation - The Sequential Read 1 and 2 ope

K9F5608U0M-YCB0 Features

* Voltage Supply : 2.7V~3.6V

* Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte

* 528-Byte Page Read Operation - Random Access