K9F5608U0M-YIB0 32M x 8 Bit NAND Flash Memory

Samsung semiconductor

Description

K9F5608U0M-YCB0,K9F5608U0M-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No.History 0.0 0.1 0.2 Initial .
- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming.

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Datasheet Specifications

Part number: K9F5608U0M-YIB0
Manufacturer: Samsung semiconductor
File Size: 353.05 KB
Datasheet: K9F5608U0M-YIB0_Samsungsemiconductor.pdf
Description: 32M x 8 Bit NAND Flash Memory

Features

* Voltage Supply : 2.7V~3.6V
* Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit
* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
* 528-Byte Page Read Operation - Random Access

Applications

* such as solid state file storage and other portable applications requiring non-volatility. PIN CONFIGURATION K9F5608U0M-YCB0/YIB0 N. C N. C N. C N. C N. C GND R/B RE CE N. C N. C Vcc Vss N. C N. C CLE ALE WE WP N. C N. C N. C N. C N. C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44

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K9F5608U0M-YIB0 32M Bit NAND Flash Memory Samsung semiconductor

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