K9F5608U0M-YIB0 Datasheet, Memory, Samsung semiconductor

K9F5608U0M-YIB0 Features

• Memory
• Voltage Supply : 2.7V~3.6V
• Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit x8bit
• Automatic Program and Erase - P

PDF File Details

Part number:

K9F5608U0M-YIB0

Manufacturer:

Samsung semiconductor

File Size:

353.05kb

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📄 Datasheet

Description:

32m x 8 bit nand flash memory. - SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. Draft Date April. 10th 1999 Ju

K9F5608U0M-YIB0 Application

• Applications such as solid state file storage and other portable applications requiring non-volatility. PIN CONFIGURATION K9F5608U0M-YCB0/YIB0 N.C

TAGS

K9F5608U0M-YIB0

Samsung semiconductor

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