K9K2G08Q0M-P Datasheet, Memory, Samsung semiconductor

K9K2G08Q0M-P Features

• Memory
• Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)b

PDF File Details

Part number:

K9K2G08Q0M-P

Manufacturer:

Samsung semiconductor

File Size:

641.65kb

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📄 Datasheet

Description:

256m x 8 bit / 128m x 16 bit nand flash memory. Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffecti

K9K2G08Q0M-P Application

• Applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 2G

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K9K2G08Q0M-P

Samsung semiconductor

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