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K9K2G08Q0M-YCB0 Datasheet - Samsung semiconductor

K9K2G08Q0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-byte(X8 device) or 1056-word(X16 device) page an.
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA >3mA -typ. Value: 8mA >4mA Draft Date Aug. 30.2001 Nov. 5.2001 Remark Advance 0.2 1. 5th cycle of ID is changed : 40h > 44h 1. Add WSOP Package Dimensions. 1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package 1..

K9K2G08Q0M-YCB0 Features

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit

K9K2G08Q0M-YCB0 Datasheet (680.06 KB)

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Datasheet Details

Part number:

K9K2G08Q0M-YCB0

Manufacturer:

Samsung semiconductor

File Size:

680.06 KB

Description:

256m x 8 bit / 128m x 16 bit nand flash memory.

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K9K2G08Q0M-YCB0 256M Bit 128M Bit NAND Flash Memory Samsung semiconductor

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