K9K2G08Q0M-PIB0 Datasheet (Samsung semiconductor) - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9K2G08Q0M-PIB0, 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1.

Initial issue 1.

IOL(R/B) of 1.8V device is changed.

-min.

Value: 7mA >3mA -typ.

Value: 8mA >4mA Draft Date Sep.

19.2001 Nov.

2001 Remark Advance 0.2 1.

5th cycle of ID is changed : 40h

K9K2G08Q0M-PIB0 Features

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bi