KFG5616Q1M-DEB Datasheet - Samsung semiconductor

KFG5616Q1M-DEB OneNAND256 FLASH MEMORY

is revised. 3. Changed Read while Load and Write While Program diagram. 4. Revised OTP Flow Chart 5. Added Multi Block Erase operation cases 6. Added Spare Assignment information 7. Added NAND Array Memory Map 8. Added OTP load/program/lock operation description 9. Revised OTP load/program/lock flow.

OneNAND256 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND256 Part No. KFG5616Q1M-DEB KFG5616D1M-DEB KFG5616U1M-DIB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) Temperature Extended Extended Industrial PKG 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 Version: Ver. 1.2 Date: June 15th, 2005 1 OneNAND256 FLASH MEMORY www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI.

KFG5616Q1M-DEB Features

* Design Technology: 0.12µm

* Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V

* Organization - Host Interface:16bit

* Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM

KFG5616Q1M-DEB_Samsungsemiconductor.pdf