KFG1G16Q2A-DEBx Datasheet - Samsung Electronics

KFG1G16Q2A-DEBx FLASH MEMORY

6. Revised Synchronous Burst Block Read Diagram. Draft Date Oct. 4, 2005 Oct. 25, 2005 Remark Advanced Advanced 0.3 Nov. 17, 2005 Advanced 0.4 1. Corrected Errata Dec. 26, 2005 2. Added INT2 pin for 4Gb QDP product in Chapter 2.3.3 3. Added INT1 and INT2 pin description in Chapter 2.4 4. Cha.

OneNAND1G(KFG1G16Q2A-DEBx) OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) Preliminary FLASH MEMORY www.DataSheet4U.com OneNANDTM Preliminary Information Specification Density 1Gb 2Gb 4Gb Part No. KFG1G16Q2A-DEBx KFH2G16Q2A-DEBx KFW4G16Q2A-DEBx VCC(core & IO) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Temperature Extended Extended Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) Version: Ver. 0.4 Date: Dec 26th, 2005 1 OneNAND1G(KFG1G16Q2A-DEBx) OneNAND2G(KFH2G16Q2A-DEBx) On.

KFG1G16Q2A-DEBx Features

* including:

* A BootRAM and bootloader

* Two independent bi-directional 2KB DataRAM buffers

* A High-Speed x16 Host Interface

* On-chip Error Correction

* On-chip NOR interface controller This on-chip integration enables system designers to reduce external syst

KFG1G16Q2A-DEBx_SamsungElectronics.pdf