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KFG1216D2M, KFG1216Q2M FLASH MEMORY

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Description

OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No.KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VC.
for below operations -.

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This datasheet PDF includes multiple part numbers: KFG1216D2M, KFG1216Q2M. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
KFG1216D2M, KFG1216Q2M
Manufacturer
Samsung semiconductor
File Size
1.30 MB
Datasheet
KFG1216Q2M_Samsungsemiconductor.pdf
Description
FLASH MEMORY
Note
This datasheet PDF includes multiple part numbers: KFG1216D2M, KFG1216Q2M.
Please refer to the document for exact specifications by model.

Features

* Architecture
* Design Technology: 0.12um
* Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V
* Organization - Host Interface:16bit
* Internal BufferRAM(5K Bytes) - 1KB for BootR

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. OneNAND™‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed

KFG1216D2M Distributors

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