KFG1216U2A Datasheet - Samsung semiconductor

KFG1216U2A FLASH MEMORY

5. Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy Back Operation with Random Data Input 2. Changed tBA from 11ns to 11.5ns 3. Pended Active Erase Current Draft Date Nov. 4, 2004 Dec. 7, 2004 Remark Preliminary Preliminary 0.2 Dec. 24, 2004.

OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY www.DataSheet4U.com OneNANDTM Specification Density 512Mb Part No. KFG1216Q2A KFG1216D2A KFG1216U2A VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) Temperature Extended Extended Industrial PKG 63FBGA(LF)/63FBGA 63FBGA(LF)/63FBGA 63FBGA(LF)/63FBGA Version: Ver. 1.0 Date: May 17th, 2005 1 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY www.DataSheet4U.com 1.0 INTRODUCTION This specification contains information about the Samsung Elec.

KFG1216U2A Features

* including:

* A BootRAM and bootloader

* Two independent bi-directional 2KB DataRAM buffers

* A High-Speed x16 Host Interface

* On-chip Error Correction

* On-chip NOR interface controller This on-chip integration enables system designers to reduce external syst

KFG1216U2A Datasheet (1.47 MB)