KFG1216Q2M FLASH MEMORY

Samsung semiconductor

Description

OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No.KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VC.
for below operations -.

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Datasheet Specifications

Part number: KFG1216Q2M
Manufacturer: Samsung semiconductor
File Size: 1.30 MB
Datasheet: KFG1216Q2M_Samsungsemiconductor.pdf
Description: FLASH MEMORY

Features

* Architecture
* Design Technology: 0.12um
* Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V
* Organization - Host Interface:16bit
* Internal BufferRAM(5K Bytes) - 1KB for BootR

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. OneNAND™‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed

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KFG1216Q2M FLASH MEMORY Samsung semiconductor

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