KFG1216Q2M

FLASH MEMORY

Samsung semiconductor

KFG1216Q2M Features

* Architecture

* Design Technology: 0.12um

* Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V

* Organization - Host Interface:16bit

* Internal BufferRAM(5K Bytes) - 1KB for BootR

KFG1216Q2M General Description

for below operations -. Reset -. Write Protection -. Burst Read Latency -. Dual Operation -. Invalid block definition and Identification method -. Error in write or read operation -. ECC 3. Revised program sequence 4. Some AC parameters are changed. tACH : 9ns

*>7ns, tCES : 7ns

*>9ns,.

KFG1216Q2M Datasheet (1.30 MB)

KFG1216Q2M Datasheet Preview — Preview of KFG1216Q2M PDF

Datasheet Details

Part number:

KFG1216Q2M

Manufacturer:

Samsung semiconductor

File Size:

1.30 MB

Description:

Flash memory.
OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No. KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VC.

📁 Related Datasheet

KFG1216Q2A FLASH MEMORY (Samsung semiconductor)

KFG1216D2A FLASH MEMORY (Samsung semiconductor)

KFG1216D2M FLASH MEMORY (Samsung semiconductor)

KFG1216U2A FLASH MEMORY (Samsung semiconductor)

KFG1216U2M FLASH MEMORY (Samsung semiconductor)

KFG1G1612M-DEB5 FLASH MEMORY (Samsung semiconductor)

KFG1G16Q2A-DEBx FLASH MEMORY (Samsung Electronics)

KFG1G16Q2C 1Gb OneNAND C-die (Samsung Electronics)

KFG1G16Q2M FLASH MEMOR (Samsung semiconductor)

KFG1G16U2B 1Gb OneNAND B-die (Samsung semiconductor)

TAGS

KFG1216Q2M FLASH MEMORY Samsung semiconductor

Image Gallery

KFG1216Q2M Features

KFG1216Q2M General Description

Datasheet Details

File Size:

Description:

KFG1216Q2M Distributor