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KFG1216Q2M - FLASH MEMORY

Samsung semiconductor

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Datasheet Details

Part number	KFG1216Q2M
Manufacturer	Samsung semiconductor
File Size	1.30 MB
Description	FLASH MEMORY
Datasheet	KFG1216Q2M_Samsungsemiconductor.pdf

KFG1216Q2M Product details

Description

for below operations -.

Features

Architecture.
Design Technology: 0.12um.
Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V.
Organization - Host Interface:16bit.
Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM.
NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes FLASH MEMORY.
Performance.
Host Interface type - Synchronous Burst Read : Clock Fr.

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Published: Jan 25, 2010 |