KFG1216U2M - FLASH MEMORY
for below operations -.
Reset -.
Write Protection -.
Burst Read Latency -.
Dual Operation -.
Invalid block definition and Identification method -.
Error in write or read operation -.
ECC 3.
Revised program sequence 4.
Some AC parameters are changed.
tACH : 9ns *>7ns, tCES : 7ns *>9ns,
OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No.
KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) 1.8V(1.7V~1.95V) Temperature Extended Extended Industrial Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) N/A www.DataSheet4U.com Version: Ver.
1.4 Date: June 15th, 2005 1 OneNAND512/OneNAND1GDDP FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
KFG1216U2M Features
* Architecture
* Design Technology: 0.12um
* Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V
* Organization - Host Interface:16bit
* Internal BufferRAM(5K Bytes) - 1KB for BootR
