Datasheet4U Logo Datasheet4U.com

KFG1216U2M, KFG1216Q2M Datasheet - Samsung semiconductor

KFG1216U2M - FLASH MEMORY

for below operations -.

Reset -.

Write Protection -.

Burst Read Latency -.

Dual Operation -.

Invalid block definition and Identification method -.

Error in write or read operation -.

ECC 3.

Revised program sequence 4.

Some AC parameters are changed.

tACH : 9ns *>7ns, tCES : 7ns *>9ns,

OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No.

KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) 1.8V(1.7V~1.95V) Temperature Extended Extended Industrial Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) N/A www.DataSheet4U.com Version: Ver.

1.4 Date: June 15th, 2005 1 OneNAND512/OneNAND1GDDP FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

KFG1216U2M Features

* Architecture

* Design Technology: 0.12um

* Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V

* Organization - Host Interface:16bit

* Internal BufferRAM(5K Bytes) - 1KB for BootR

KFG1216Q2M_Samsungsemiconductor.pdf

This datasheet PDF includes multiple part numbers: KFG1216U2M, KFG1216Q2M. Please refer to the document for exact specifications by model.
KFG1216U2M Datasheet Preview Page 2 KFG1216U2M Datasheet Preview Page 3

Datasheet Details

Part number:

KFG1216U2M, KFG1216Q2M

Manufacturer:

Samsung semiconductor

File Size:

1.30 MB

Description:

Flash memory.

Note:

This datasheet PDF includes multiple part numbers: KFG1216U2M, KFG1216Q2M.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags