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KFG5616U1M-DIB

OneNAND256 FLASH MEMORY

KFG5616U1M-DIB Features

* Design Technology: 0.12µm

* Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V

* Organization - Host Interface:16bit

* Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM

KFG5616U1M-DIB General Description

is revised. 3. Changed Read while Load and Write While Program diagram. 4. Revised OTP Flow Chart 5. Added Multi Block Erase operation cases 6. Added Spare Assignment information 7. Added NAND Array Memory Map 8. Added OTP load/program/lock operation description 9. Revised OTP load/program/lock flow.

KFG5616U1M-DIB Datasheet (1.29 MB)

Preview of KFG5616U1M-DIB PDF

Datasheet Details

Part number:

KFG5616U1M-DIB

Manufacturer:

Samsung semiconductor

File Size:

1.29 MB

Description:

Onenand256 flash memory.
OneNAND256 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND256 Part No. KFG5616Q1M-DEB KFG5616D1M-DEB KFG5616U1M-DIB VCC(core .

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KFG5616U1M-DIB OneNAND256 FLASH MEMORY Samsung semiconductor

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