Datasheet4U.com

KFH1G16Q2M - FLASH MEMORY

Samsung semiconductor

📥 Download Datasheet

KFH1G16Q2M Datasheet Preview — Preview of KFH1G16Q2M PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	KFH1G16Q2M
Manufacturer	Samsung semiconductor
File Size	1.30 MB
Description	FLASH MEMORY
Datasheet	KFH1G16Q2M_Samsungsemiconductor.pdf

KFH1G16Q2M Product details

Description

for below operations -.

Features

Architecture.
Design Technology: 0.12um.
Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V.
Organization - Host Interface:16bit.
Internal BufferRAM(5K Bytes) - 1KB for BootRAM, 4KB for DataRAM.
NAND Array - Page Size : (2K+64)bytes - Block Size : (128K+4K)bytes FLASH MEMORY.
Performance.
Host Interface type - Synchronous Burst Read : Clock Fr.

📁 KFH1G16Q2M Similar Datasheet

KFH2G16Q2A-DEBx - FLASH MEMORY (Samsung Electronics)

Other Datasheets by Samsung semiconductor

KFH2G1612M-DEB5 - FLASH MEMORY
KFH2G16Q2M - FLASH MEMOR
KFH4G16Q2M - 2Gb OneNAND M-Die

Published: Jan 25, 2010 |