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KFH1G16Q2M

FLASH MEMORY

KFH1G16Q2M Features

* Architecture

* Design Technology: 0.12um

* Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V

* Organization - Host Interface:16bit

* Internal BufferRAM(5K Bytes) - 1KB for BootR

KFH1G16Q2M General Description

for below operations -. Reset -. Write Protection -. Burst Read Latency -. Dual Operation -. Invalid block definition and Identification method -. Error in write or read operation -. ECC 3. Revised program sequence 4. Some AC parameters are changed. tACH : 9ns

*>7ns, tCES : 7ns

*>9ns,.

KFH1G16Q2M Datasheet (1.30 MB)

Preview of KFH1G16Q2M PDF

Datasheet Details

Part number:

KFH1G16Q2M

Manufacturer:

Samsung semiconductor

File Size:

1.30 MB

Description:

Flash memory.
OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No. KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VC.

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TAGS

KFH1G16Q2M FLASH MEMORY Samsung semiconductor

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