KFH2G16Q2M Datasheet - Samsung semiconductor

KFH2G16Q2M FLASH MEMOR

5. Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Corrected Errata 2. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current 4. Changed tBA from 11ns to 11.5ns Draft Date Oct. 26, 2004 Dec. 7, 2004 Remark Preliminary Pr.

OneNAND4G(KFW4G16Q2M-DEB5) OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density 1Gb 2Gb 4Gb Part No. KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 VCC(core & IO) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Temperature Extended Extended Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) www.DataSheet4U.com Version: Ver. 1.1 Date: July 20, 2005 1 OneNAND4G(KFW4G16Q2M-DEB5) OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMO.

KFH2G16Q2M Features

* including:

* A BootRAM and bootloader

* Two independent bi-directional 2KB DataRAM buffers

* A High-Speed x16 Host Interface

* On-chip Error Correction

* On-chip NOR interface controller This on-chip integration enables system designers to reduce external syst

KFH2G16Q2M_Samsungsemiconductor.pdf