KM432S2030C - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

The KM432S2030C by Samsung semiconductor is a 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL. Below is the official datasheet preview.

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KM432S2030C 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL by Samsung semiconductor - Datasheet Preview — Official preview page of the **KM432S2030C** 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL datasheet (Samsung semiconductor).

Datasheet Details

Part number	KM432S2030C
Manufacturer	Samsung semiconductor
File Size	1.13 MB
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	KM432S2030C_Samsungsemiconductor.pdf
Additional preview pages of the KM432S2030C datasheet.

KM432S2030C Product details

Description

The KM432S2030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

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Published: Apr 4, 2005 |