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KM432D2131, KM432D2131TQ Datasheet - Samsung Semiconductor

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KM432D2131, KM432D2131TQ 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM

www.DataSheet4U.net KM432D2131 Target 64M DDR SGRAM 64Mbit DDR SGRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-direct.
FOR 512K x 32Bit x 4 Bank DDR SGRAM The KM432D2131 is 67,108,864 bits of hyper synchronous data rate Dynamic GRAM organized as 4 x 524,288 words by 32.

KM432D2131TQ_SamsungSemiconductor.pdf

This datasheet PDF includes multiple part numbers: KM432D2131, KM432D2131TQ. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

KM432D2131, KM432D2131TQ

Manufacturer:

Samsung Semiconductor

File Size:

806.39 KB

Description:

512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM

Note:

This datasheet PDF includes multiple part numbers: KM432D2131, KM432D2131TQ.
Please refer to the document for exact specifications by model.

Features

* 3.3V ±5% power supply for device operation
* 2.5V ±5% power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 2, 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst ty

Applications

* - 3 - Rev. 0.3 (May. 1999) KM432D2131 PIN CONFIGURATION (Top View) Target 64M DDR SGRAM DSF, MCL 52 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 DQ29 VSSQ DQ30 DQ31 VSS VDDQ N. C N. C N. C N. C N. C VSSQ RFU DQS VDDQ VDD DQ0 DQ1 VS

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