KM416S1020C Datasheet - Samsung Semiconductor

KM416S1020C 1M x 16 SDRAM

The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock c.

KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. w w w . t a d h s a t e e . u 4 m o c -1- Rev. 0.6 (Sep. 1998) www.DataSheet4U.com KM416S1020C Revision History Revision 0.6 (September 10, 1998) CMOS SDRAM Removed KM416S1020C-H/L product (-H: 100MHz @ CL=2, -L: 100MHz @ CL3 ) Changed the clock cycle time of.

KM416S1020C Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

KM416S1020C_SamsungSemiconductor.pdf