KM416S1120D 512K x 16bit x 2 Banks Synchronous DRAM LVTTL

Description

KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right t.
The KM416S1120D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high pe.

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KM416S1120D Datasheet Preview — Preview of KM416S1120D PDF

Datasheet Specifications

Part number: KM416S1120D
Manufacturer: ETC
File Size: 1.10 MB
Datasheet: KM416S1120D_ETC.pdf
Description: 512K x 16bit x 2 Banks Synchronous DRAM LVTTL

Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

Applications

* ORDERING INFORMATION Part NO. KM416S1120DT-G/FC KM416S1120DT-G/F6 KM416S1120DT-G/F7 KM416S1120DT-G/F8 KM416S1120DT-G/F10 MAX Freq. 183MHz 166MHz 143MHz 125MHz 100MHz LVTTL 50 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQ

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KM416S1120D 512K 16bit Banks Synchronous DRAM LVTTL ETC

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