* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive
KM416S1120D Datasheet (1.10 MB)
KM416S1120D
ETC
1.10 MB
512k x 16bit x 2 banks synchronous dram lvttl.
KM416S1120D
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.4 June 1999
Samsung Electronics reserves the right t.
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