Datasheet Details
- Part number
- KM416S1120D
- Manufacturer
- ETC
- File Size
- 1.10 MB
- Datasheet
- KM416S1120D_ETC.pdf
- Description
- 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120D Description
KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right t.
The KM416S1120D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high pe.
KM416S1120D Features
* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive
KM416S1120D Applications
* ORDERING INFORMATION
Part NO. KM416S1120DT-G/FC KM416S1120DT-G/F6 KM416S1120DT-G/F7 KM416S1120DT-G/F8 KM416S1120DT-G/F10 MAX Freq. 183MHz 166MHz 143MHz 125MHz 100MHz LVTTL 50 TSOP(II) Interface Package
FUNCTIONAL BLOCK DIAGRAM
I/O Control LWE LDQ
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