KM416S4030C - 1M x 16Bit x 4 Banks Synchronous DRAM

Name: KM416S4030C
SKU: KM416S4030C-250310

Samsung semiconductor

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Datasheet Details

Part number	KM416S4030C
Manufacturer	Samsung semiconductor
File Size	124.27 KB
Description	1M x 16Bit x 4 Banks Synchronous DRAM
Datasheet	KM416S4030C_Samsungsemiconductor.pdf

KM416S4030C Product details

Description

The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG ′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) Preliminary CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

KM416S8030 - 2M x 16Bit x 4 Banks Synchronous DRAM
KM416S8030B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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Published: Apr 4, 2005 |