Datasheet4U Logo Datasheet4U.com

KM416S4030C

1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4030C Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

KM416S4030C General Description

The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG ′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every cloc.

KM416S4030C Datasheet (124.27 KB)

Preview of KM416S4030C PDF

Datasheet Details

Part number:

KM416S4030C

Manufacturer:

Samsung semiconductor

File Size:

124.27 KB

Description:

1m x 16bit x 4 banks synchronous dram.
KM416S4030C Revision History Revision 1 (May 1998) - ICC2 N value (10mA) is changed to 12mA. Preliminary CMOS SDRAM Revision .2 (June 1998) - tSH (-.

📁 Related Datasheet

KM416S4020A CMOS SDRAM (Samsung Electronics)

KM416S4020B CMOS SDRAM (Samsung Electronics)

KM416S4021AT CMOS SDRAM (Samsung Electronics)

KM416S4021B CMOS SDRAM (Samsung Electronics)

KM416S1020BT-G10T CMOS 16M-Bit SDRAM (ETC)

KM416S1020C 1M x 16 SDRAM (Samsung Semiconductor)

KM416S1021C 512K x 16-Bit x 2-Bank SDRAM (Samsung Semiconductor)

KM416S1120AT 521K x 16-Bit x 2 Bank SDRAM (Samsung Electronics)

KM416S1120D 512K x 16bit x 2 Banks Synchronous DRAM LVTTL (ETC)

KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM (Samsung semiconductor)

TAGS

KM416S4030C 16Bit Banks Synchronous DRAM Samsung semiconductor

Image Gallery

KM416S4030C Datasheet Preview Page 2 KM416S4030C Datasheet Preview Page 3

KM416S4030C Distributor