KM416S8030B, KM4-16S Datasheet - Samsung semiconductor

KM416S8030B 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every cloc.

KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B Revision History Revision 0.0 (May 15, 1999) CMOS SDRAM Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. Skip ICC4 value of CL=2 in DC characteristics in datasheet. Define a new parameter of tDAL( 2CLK +20ns), Last data i.

KM416S8030B Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

KM4-16S-8030B.pdf

KM416S8030B Datasheet Preview — This datasheet PDF includes multiple part numbers: KM416S8030B, KM4-16S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

KM416S8030B, KM4-16S

Manufacturer:

Samsung semiconductor

File Size:

133.48 KB

Description:

128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.

Note:

This datasheet PDF includes multiple part numbers: KM416S8030B, KM4-16S.
Please refer to the document for exact specifications by model.

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KM416S8030B KM4-16S 128Mbit SDRAM 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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