KM416S8030B, KM4-16S - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Name: KM416S8030B
SKU: KM416S8030B-250318

Samsung semiconductor

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KM416S8030B Datasheet Preview — This datasheet PDF includes multiple part numbers: KM416S8030B, KM4-16S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	KM416S8030B, KM4-16S
Manufacturer	Samsung semiconductor
File Size	133.48 KB
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	KM4-16S-8030B.pdf
Note	This datasheet PDF includes multiple part numbers: KM416S8030B, KM4-16S. Please refer to the document for exact specifications by model.

KM416S8030B Product details

Description

The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle.

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Other Datasheets by Samsung semiconductor

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Published: Apr 4, 2005 |