KM416S8030BN 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Description

shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0..
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high.

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Datasheet Specifications

Part number: KM416S8030BN
Manufacturer: Samsung semiconductor
File Size: 83.41 KB
Datasheet: KM416S8030BN_Samsungsemiconductor.pdf
Description: 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave)
* All inputs are sa

Applications

* ORDERING INFORMATION Part No. KM416S8030BN-G/FL Max Freq. 100MHz(CL=3) Interface Package LVTTL 54pin sTSOP(II) KM416S8030BN-G/FH 100MHz(CL=2) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 2M x 16 2M x 16 2M x 16 2M x 16 Refresh Counter Output Buffer Row Deco

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KM416S8030BN 128Mb SDRAM Shrink TSOP 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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