Datasheet Details
Part number:
KM416S8030BN
Manufacturer:
Samsung semiconductor
File Size:
83.41 KB
Description:
128mb sdram shrink tsop 2m x 16bit x 4 banks synchronous dram lvttl.
KM416S8030BN_Samsungsemiconductor.pdf
Datasheet Details
Part number:
KM416S8030BN
Manufacturer:
Samsung semiconductor
File Size:
83.41 KB
Description:
128mb sdram shrink tsop 2m x 16bit x 4 banks synchronous dram lvttl.
KM416S8030BN, 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every cloc
shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.1 Aug.
1999 Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.1 Aug.
1999 shrink-TSOP KM416S8030BN Revision History Version 0.0 (July 2, 1999, Preliminary) Preliminary specification for shrink-TSOP.
Preliminary CMOS SDRAM Version 0.1 (August 24, 1999, Preliminary) Added Note 5
KM416S8030BN Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave)
* All inputs are sa
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