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KM416S8030BN

128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

KM416S8030BN Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave)

* All inputs are sa

KM416S8030BN General Description

The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every cloc.

KM416S8030BN Datasheet (83.41 KB)

Preview of KM416S8030BN PDF

Datasheet Details

Part number:

KM416S8030BN

Manufacturer:

Samsung semiconductor

File Size:

83.41 KB

Description:

128mb sdram shrink tsop 2m x 16bit x 4 banks synchronous dram lvttl.
shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0..

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TAGS

KM416S8030BN 128Mb SDRAM Shrink TSOP 16Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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