KM416S8030BN - 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

The KM416S8030BN by Samsung semiconductor is a 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL. Below is the official datasheet preview.

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KM416S8030BN 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL by Samsung semiconductor - Datasheet Preview — Official preview page of the **KM416S8030BN** 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL datasheet (Samsung semiconductor).

Datasheet Details

Part number	KM416S8030BN
Manufacturer	Samsung semiconductor
File Size	83.41 KB
Description	128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	KM416S8030BN_Samsungsemiconductor.pdf
Additional preview pages of the KM416S8030BN datasheet.

KM416S8030BN Product details

Description

The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle).

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Other Datasheets by Samsung semiconductor

KM416S8030B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
KM416S8030 - 2M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030C - 1M x 16Bit x 4 Banks Synchronous DRAM
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KM416C1000B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
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Published: Jul 3, 2007 |