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KM416S8030

2M x 16Bit x 4 Banks Synchronous DRAM

KM416S8030 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave)

* All inputs are

KM416S8030 General Description

The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clcok.

KM416S8030 Datasheet (116.91 KB)

Preview of KM416S8030 PDF

Datasheet Details

Part number:

KM416S8030

Manufacturer:

Samsung semiconductor

File Size:

116.91 KB

Description:

2m x 16bit x 4 banks synchronous dram.

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TAGS

KM416S8030 16Bit Banks Synchronous DRAM Samsung semiconductor

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