KM416S8030 Datasheet - Samsung semiconductor

KM416S8030, 2M x 16Bit x 4 Banks Synchronous DRAM

KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM .
The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high.

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KM416S8030_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

KM416S8030

Manufacturer:

Samsung semiconductor

File Size:

116.91 KB

Description:

2M x 16Bit x 4 Banks Synchronous DRAM

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Part NO. KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL KM416S8030T-G/F10 MAX Freq. 125MHz 100MHz 100MHz 100MHz LVTTL 54pin TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 2M x 16 Sense AMP 2M x 16 2M x 16 2M x

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KM416S8030 16Bit Banks Synchronous DRAM Samsung semiconductor

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