KM48S16030B Datasheet - Samsung semiconductor

KM48S16030B 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

The KM48S16030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock.

KM48S16030B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030B Revision History Revision 0.0 (May 15, 1999) CMOS SDRAM Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. Skip ICC4 value of CL=2 in DC characteristics in datasheet. Define a new parameter of tDAL( 2CLK +20ns), Last data in.

KM48S16030B Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

KM48S16030B_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

KM48S16030B

Manufacturer:

Samsung semiconductor

File Size:

133.70 KB

Description:

128mbit sdram 4m x 8bit x 4 banks synchronous dram lvttl.

KM48S16030B Distributor

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KM48S16030B KM48S16030B 128Mbit SDRAM 8Bit Banks Synchronous DRAM LVTTL Samsung semiconductor