KSP06
Samsung semiconductor
315.84kb
Npn epitaxial silicon transistor.
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KSP05 - Amplifier Transistor
(Fairchild Semiconductor)
KSP05/06
KSP05/06
Amplifier Transistor
• Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement.
KSP05 - NPN EPITAXIAL SILICON TRANSISTOR
(Samsung semiconductor)
.
KSP06 - Amplifier Transistor
(Fairchild Semiconductor)
KSP05/06
KSP05/06
Amplifier Transistor
• Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement.
KSP-1MLR2 - Silicon Photodiode Mounted
(KODENSHI KOREA CORP)
KSP-1MLR2 1. Scope
KODENSHI KOREA CORP
The KSP-1MLR2, a silicon photodiode mounted in a TO-18 type header with black epoxy encapsulation, provides w.
KSP10 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
KSP10
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.
/ Features VHF/UHF 。 VHF/UHF Tr.
KSP10 - VHF/UHF transistor
(Fairchild Semiconductor)
KSP10
KSP10
VHF/UHF transistor
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless o.
KSP10 - NPN Epitaxial Silicon Transistor
(ON Semiconductor)
DATA SHEET .onsemi.
NPN Epitaxial Silicon Transistor
KSP10
Features
• VHF/UHF Transistor • These Devices are Pb−Free, Halogen Free/BFR Free a.
KSP102 - Dip Switch
(OTAX)
ピアノ
K シリーズ
な リフロー
1. ナイフエッジ ･ ハイプレッシャーによりして します。 2. は 200kg/mm2 あるのでによるは しません。 3. とは IC とくじですから、が ます。
DC5V 10mA 50m Ω AC300V 1 100.
KSP13 - Darlington Transistor
(Fairchild Semiconductor)
KSP13/14
KSP13/14
Darlington Transistor
• Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW
1
TO-92
1. Emitter 2. .
KSP13 - NPN Epitaxial Silicon Darlington Transistor
(ON Semiconductor)
DATA SHEET .onsemi.
NPN Epitaxial Silicon Darlington Transistor
KSP13
Features
• Collector−Emitter Voltage: VCES=30 V • Collector Power Dissi.
